Patent Number: 7,826,181

Title: Magnetic memory with porous non-conductive current confinement layer

Abstract: A magnetic element having a ferromagnetic pinned layer, a ferromagnetic free layer, a non-magnetic spacer layer therebetween, and a porous non-electrically conducting current confinement layer between the free layer and the pinned layer. The current confinement layer forms an interface either between the free layer and the non-magnetic spacer layer or the pinned layer and the non-magnetic spacer layer.

Inventors: Tang; Michael Xuefei (Bloomington, MN), Sun; Ming (Eden Prairie, MN), Dimitrov; Dimitar V. (Edina, MN), Ryan; Patrick (St. Paul, MN)

Assignee: Seagate Technology LLC

International Classification: G11B 5/33 (20060101); G11B 5/127 (20060101)

Expiration Date: 2019-11-02 0:00:00