Patent Number: 7,826,251

Title: High performance metal gate polygate 8 transistor SRAM cell with reduced variability

Abstract: A static random access memory cell includes a metal hi-k layer; a poly-SiON gate stack over the metal hi-k layer; a plurality of inverters disposed within the poly-SiON gate stack; and a plurality of field effect transistors placed in the metal hi-k layer.

Inventors: Chang; Leland (New York, NY), Sleight; Jeffrey W. (Ridgefield, CT)

Assignee: International Business Machines Corporation

International Classification: G11C 11/00 (20060101)

Expiration Date: 2019-11-02 0:00:00