Patent Number: 7,826,256

Title: STRAM with compensation element

Abstract: Spin-transfer torque memory having a compensation element is disclosed. The spin-transfer torque memory unit includes a synthetic antiferromagnetic reference element, a synthetic antiferromagnetic compensation element, a free magnetic layer between the synthetic antiferromagnetic reference element and the synthetic antiferromagnetic compensation element, and an electrically insulating and non-magnetic tunneling barrier layer separating the free magnetic layer from the synthetic antiferromagnetic reference element. The free magnetic layer has a saturation moment value greater than 1100 emu/cc.

Inventors: Zheng; Yuankai (Bloomington, MN), Dimitrov; Dimitar V. (Edina, MN), Wang; Dexin (Eden Prairie, MN), Tian; Wei (Bloomington, MN), Wang; Xiaobin (Chanhassen, MN), Lou; Xiaohua (Bloomington, MN)

Assignee: Seagate Technology LLC

International Classification: G11C 7/00 (20060101)

Expiration Date: 2019-11-02 0:00:00