Patent Number: 7,951,638

Title: Method for making a textured surface on a solar cell

Abstract: A method is disclosed for making a textured surface on a solar cell. At first, there is provided a solar cell with a P-type layer and an N-type layer. Then, a silicon quantum dot-silicon nitride film is provided on the solar cell by chemical vapor deposition. Then, the silicon quantum dot-silicon nitride film is etched. In a first phase, the etching of the silicon nitride is faster than that of the silicon quantum dots so that the silicon quantum dots are exposed, thus forming a transient textured surface on the silicon quantum dot-silicon nitride film. In a second phase, the etching of the silicon nitride is slower than that of the silicon quantum dots so that some of the silicon quantum dots are removed, thus leaving cavities in the silicon quantum dot-silicon nitride film, i.e., forming a final textured surface on the silicon quantum dot-silicon nitride film.

Inventors: Yang; Tsun Neng (Taoyuan County, TW)

Assignee: Atomic Energy Council-Institute of Nuclear Research

International Classification: H01L 31/18 (20060101)

Expiration Date: 2019-05-31 0:00:00