Patent Number: 7,956,380

Title: Semiconductor light-emitting device

Abstract: A semiconductor light-emitting device is provided. In an InGaN-based semiconductor light-emitting device including an Ag electrode, a semiconductor layer on the contact side of at least the Ag electrode is a dislocation semiconductor layer of which dislocation density is selected to be less than 1.times.10.sup.7 (1/cm.sup.2) and thereby short-circuit caused by Ag migration generated along this dislocation can be avoided. Thus, this semiconductor light-emitting device is able to solve a problem of a shortened life and a problem with the fraction of defective devices encountered with the InGaN-based semiconductor light-emitting device.

Inventors: Suzuki; Jun (Kanagawa, JP), Doi; Masato (Kanagawa, JP), Biwa; Goshi (Kanagawa, JP), Okuyama; Hiroyuki (Kanagawa, JP)

Assignee: Sony Corporation

International Classification: H01L 33/00 (20100101)

Expiration Date: 2019-06-07 0:00:00