Patent Number: 8,066,863

Title: Electrodeposition technique and apparatus to form selenium containing layers

Abstract: A multi step process, which forms a Group VIA material layer, such as a selenium (Se) layer, having a thickness greater than 500 nanometers. The process includes electroplating a Se material layer, which has an amorphous micro-structure and which exhibits high electrical resistivity, on a workpiece and subsequently annealing the Se layer. Annealing process transforms the amorphous structure of the Se layer into a crystalline structure which is conductive. After the annealing, another Se layer can be electroplated onto the annealed Se layer. The electroplating and annealing steps can be repeated until the desired Se layer thickness is reached.

Inventors: Han; Yongbong (Fremont, CA), Aksu; Serdar (San Jose, CA), Basol; Bulent M. (Manhattan Beach, CA)

Assignee: SoloPower, Inc.

International Classification: C25D 5/10 (20060101); C25D 5/50 (20060101)

Expiration Date: 2020-11-29 0:00:00