Patent Number: 8,071,397

Title: Semiconductor fabricating apparatus with function of determining etching processing state

Abstract: A semiconductor fabricating method including: placing the semiconductor wafer having a film thereon inside of a chamber; generating plasma; detecting a quantity of interference lights for each of at least two wavelengths obtained from a surface of the wafer for a predetermined time period during the etching of the wafer; detecting a first time point at which the detected quantity of interference lights for one of the two wavelengths becomes a maximum and a second time point at which the detected quantity of interference lights for the other wavelength becomes a minimum; determining a state of etching based on a result of comparing a predetermined value with an interval between the first and second time points, wherein both time points are detected by using outputs of a detector for detecting a quantity of the interference lights; and controlling etching in accordance with the determining.

Inventors: Usui; Tatehito (Chiyoda, JP), Yoshigai; Motohiko (Hikari, JP), Jyouo; Kazuhiro (Kudamatsu, JP), Ono; Tetsuo (Iruma, JP)

Assignee: Hitachi High-Technologies Corporation

International Classification: H01L 21/00 (20060101)

Expiration Date: 2020-12-06 0:00:00