Patent Number: 8,071,981

Title: Semiconductor device and method for fabricating the same

Abstract: The invention primarily provides gate electrodes and gate wirings permitting large-sized screens for active matrix-type display devices, wherein, in order to achieve this object, the construction of the invention is a semiconductor device having, on the same substrate, a pixel TFT provided in a display region and a driver circuit TFT provided around the display region, wherein the gate electrodes of the pixel TFT and the driver circuit TFT are formed from a first conductive layer, the gate electrodes are in electrical contact through connectors with gate wirings formed from a second conductive layer, and the connectors are provided outside the channel-forming regions of the pixel TFT and the driver circuit TFT.

Inventors: Yamazaki; Shunpei (Tokyo, JP), Koyama; Jun (Kanagawa, JP), Takayama; Toru (Kanagawa, JP), Hamatani; Toshiji (Kanagawa, JP)

Assignee: Semiconductor Energy Laboratory Co., Ltd.

International Classification: H01L 29/24 (20060101)

Expiration Date: 2020-12-06 0:00:00