Patent Number: 8,089,065

Title: Organic thin film transistors

Abstract: A method of forming an organic thin film transistor comprising: providing a structure comprising source and drain electrodes with a channel region therebetween, a gate electrode, and a dielectric layer disposed between the source and drain electrodes and the gate electrode; and patterning the dielectric layer using the source and drain electrodes as a mask to form a region of dielectric material in the channel region which is thinner than regions of dielectric material adjacent the channel region.

Inventors: Whiting; Gregory (Menlo Park, CA), Halls; Jonathan (Cambridge, GB)

Assignee: Cambridge Display Technology Limited

International Classification: H01L 35/24 (20060101)

Expiration Date: 2020-01-03 0:00:00