Patent Number: 8,089,129

Title: Isolated CMOS transistors

Abstract: Isolated CMOS transistors formed in a P-type semiconductor substrate include an N-type submerged floor isolation region and a filled trench extending downward from the surface of the substrate to the floor isolation region. Together the floor isolation region and the filled trench form an isolated pocket of the substrate which contains a P-channel MOSFET in an N-well and an N-channel MOSFET in a P-well. The substrate does not contain an epitaxial layer, thereby overcoming the many problems associated with fabricating the same.

Inventors: Disney; Donald R. (Cupertino, CA), Williams; Richard K. (Cupertino, CA)

Assignee: Advanced Analogic Technologies, Inc.

International Classification: H01L 21/70 (20060101)

Expiration Date: 2020-01-03 0:00:00