Patent Number: 8,089,136

Title: Semiconductor device

Abstract: A semiconductor device of the invention has a plurality of resistor elements formed on an element isolating oxide film in predetermined regions on a surface of a semiconductor substrate. Active regions are furnished close to the resistor elements. This allows the element isolating oxide film near the resistor elements to be divided into suitable strips, forestalling a concave formation at the center of the element isolating oxide film upon polishing of the film by CMP and thereby enhancing dimensional accuracy of the resistor elements upon fabrication.

Inventors: Amishiro; Hiroyuki (Tokyo, JP), Kumamoto; Toshio (Tokyo, JP), Igarashi; Motoshige (Tokyo, JP), Yamaguchi; Kenji (Tokyo, JP)

Assignee: Renesas Electronics Corporation

International Classification: H01L 29/00 (20060101)

Expiration Date: 2020-01-03 0:00:00