Patent Number: 8,304,316

Title: Semiconductor device and method of forming a semiconductor device

Abstract: In a power semiconductor device and a method of forming a power semiconductor device, a thin layer of semiconductor substrate is left below the drift region of a semiconductor device. A power semiconductor device has an active region that includes the drift region and has top and bottom surfaces formed in a layer provided on a semiconductor substrate. A portion of the semiconductor substrate below the active region is removed to leave a thin layer of semiconductor substrate below the drift region. Electrical terminals are provided directly or indirectly to the top surface of the active region to allow a voltage to be applied laterally across the drift region.

Inventors: Udrea; Florin (Cambridge, GB), Amaratunga; Gehan Anil Joseph (Cambridge, GB), Trajkovic; Tanya (Cambridge, GB), Pathirana; Vasantha (Cambridge, GB)

Assignee: Cambridge Semiconductor Limited

International Classification: H01L 21/336 (20060101)

Expiration Date: 2021-11-06 0:00:00