Patent Number: 8,304,340

Title: Method for manufacturing stacked contact plugs

Abstract: A semiconductor device manufacturing method including: forming a first interlayer insulating film on a semiconductor substrate; forming a first hole in the first interlayer insulating film; forming a barrier film inside the first hole; filling a conductive material in the first hole to form a first plug; forming a second interlayer insulating film on the first interlayer insulating film; forming a second hole reaching the first plug in the second interlayer insulating film; selectively etching an upper end of the barrier film inside the second hole; and forming a second plug for connection to the first plug inside the second hole.

Inventors: Izawa; Mitsutaka (Tokyo, JP)

Assignee: Elpida Memory, Inc.

International Classification: H01L 21/4763 (20060101)

Expiration Date: 2021-11-06 0:00:00