Patent Number: 8,318,572

Title: Inexpensive electrode materials to facilitate rutile phase titanium oxide

Abstract: This disclosure provides a method of fabricating a semiconductor stack and associated device, such as a capacitor and DRAM cell. In particular, a bottom electrode has a material selected for lattice matching characteristics. This material may be created from a relatively inexpensive metal oxide which is processed to adopt a conductive, but difficult-to-produce oxide state, with specific crystalline form; to provide one example, specific materials are disclosed that are compatible with the growth of rutile phase titanium dioxide (TiO.sub.2) for use as a dielectric, thereby leading to predictable and reproducible higher dielectric constant and lower effective oxide thickness and, thus, greater part density at lower cost.

Inventors: Shanker; Sunil (Santa Clara, CA), Rui; Xiangxin (San Jose, CA), Kumar; Pragati (San Jose, CA), Chen; Hanhong (San Jose, CA), Hirota; Toshiyuki (Tokyo, JP)

Assignee: Intermolecular, Inc.

International Classification: H01L 21/20 (20060101); H01L 21/8244 (20060101); H01L 21/8234 (20060101); H01L 21/8242 (20060101); H01L 21/3205 (20060101)

Expiration Date: 2021-11-27 0:00:00