Patent Number: 8,491,808

Title: Method of polishing a substrate comprising polysilicon, silicon oxide and silicon nitride

Abstract: A method for chemical mechanical polishing of a substrate is provided, comprising: providing a substrate, wherein the substrate comprises polysilicon, silicon oxide and silicon nitride; providing a chemical mechanical polishing composition, comprising, as initial components: water; an abrasive; an alkyl aryl polyether sulfonate compound, wherein the alkyl aryl polyether sulfonate compound has a hydrophobic portion having an alkyl group bound to an aryl ring and a nonionic acyclic hydrophilic portion having 4 to 100 carbon atoms; and a substance according to formula I ##STR00001## wherein each of R.sup.1, R.sup.2, R.sup.3, R.sup.4, R.sup.5, R.sup.6 and R.sup.7 is a bridging group having a formula --(CH.sub.2).sub.n--, wherein n is an integer selected from 1 to 10; providing a chemical mechanical polishing pad with a polishing surface; moving the polishing surface relative to the substrate; dispensing the chemical mechanical polishing composition onto the polishing surface; and, abrading at least a portion of the substrate to polish the substrate; wherein at least some of the polysilicon is removed from the substrate; and, wherein at least some of the silicon oxide and silicon nitride is removed from the substrate.

Inventors: Guo; Yi (Newark, DE), Liu; Zhendong (King of Prussia, PA), Reddy; Kancharla-Arun Kumar (Bear, DE), Zhang; Guangyun (Furlong, PA)

Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.

International Classification: C03C 15/00 (20060101); H01L 21/302 (20060101); H01L 21/461 (20060101); C03C 25/68 (20060101)

Expiration Date: 2021-07-23 0:00:00