Patent Number: 8,492,225

Title: Integrated trench guarded schottky diode compatible with powerdie, structure and method

Abstract: A method and structure for a voltage converter including a trench field effect transistor (FET) and a trench guarded Schottky diode which is integrated with the trench FET. In an embodiment, a voltage converter can include a lateral FET, a trench FET, and a trench guarded Schottky diode integrated with the trench FET. A method to form a voltage converter can include the formation of a trench FET gate, a trench guarded Schottky diode gate, and a lateral FET gate using a single conductive layer such as a polysilicon layer.

Inventors: Girdhar; Dev Alok (Indialantic, FL), Hebert; Francois (San Mateo, CA)

Assignee: Intersil Americas Inc.

International Classification: H01L 21/336 (20060101)

Expiration Date: 2021-07-23 0:00:00