Patent Number: 8,492,236

Title: Step-like spacer profile

Abstract: Interlayer dielectric gap fill processes are enhanced by forming gate spacers with a step-like or tapered profile. Embodiments include forming a gate electrode on a substrate, depositing a spacer material over the gate electrode, etching the spacer material to form a first spacer on each side of the gate electrode, and pulling back the first spacers to form second spacers which have a step-like profile. Embodiments further include depositing a second spacer material over the gate electrode and the second spacers, and etching the second spacer material to form a third spacer on each second spacer, the second and third spacers forming an outwardly tapered composite spacer.

Inventors: Rao; Xuesong (Singapore, SG), Seet; Chim Seng (Singapore, SG), Cong; Hai (Singapore, SG), Zou; Zheng (Singapore, SG), See; Alex (Singapore, SG), Tan; Yun Ling (Singapore, SG), Zhou; Wen Zhan (Singapore, SG), Leong; Lup San (Singapore, SG), Liu; Huang (Singapore, SG)

Assignee: GLOBALFOUNDRIES Singapore Pte. Ltd.

International Classification: H01L 21/336 (20060101)

Expiration Date: 2021-07-23 0:00:00