Patent Number: 8,497,563

Title: Semiconductor device and method for its manufacture

Abstract: A semiconductor system having a trench MOS barrier Schottky diode, having an integrated substrate PN diode as a clamping element (TMBS-ub-PN), suitable in particular as a Zener diode having a breakdown voltage of approximately 20V for use in a vehicle generator system, the TMBS-sub-PN being made up of a combination of Schottky diode, MOS structure, and substrate PN diode, and the breakdown voltage of substrate PN diode BV_pn being lower than the breakdown voltage of Schottky diode BV_schottky and the breakdown voltage of MOS structure BV_mos.

Inventors: Qu; Ning (Reutlingen, DE), Goerlach; Alfred (Kusterdingen, DE)

Assignee: Robert Bosch GmbH

International Classification: H01L 29/66 (20060101)

Expiration Date: 2021-07-30 0:00:00