Patent Number: 8,501,567

Title: Manufacturing method of high voltage device

Abstract: The present invention discloses a manufacturing method of a high voltage device. The high voltage device is formed in a first conductive type substrate. The high-voltage device includes: a second conductive type buried layer; a first conductive type high voltage well; and a second conductive type body. The high voltage well is formed by the same step for forming a first conductive type well or a first conductive type channel stop layer of a low voltage device formed in the same substrate. The body is formed by the same step for forming a second conductive type well of the low voltage device.

Inventors: Huang; Tsung-Yi (Hsinchu, TW), Wang; Yuh-Chyuan (Zhubei, TW)

Assignee: Richtek Technology Corporation, R.O.C.

International Classification: H01L 21/8234 (20060101)

Expiration Date: 2021-08-06 0:00:00