Patent Number: 8,501,604

Title: Method for forming a doped region in a semiconductor layer of a substrate and use of such method

Abstract: A method of forming a doped region in a semiconductor layer of a substrate by alloying with doping elements is disclosed. In one aspect, the method includes screen printing a paste layer of doping element paste to the substrate and firing the screen printed paste layer of doping element paste, wherein a highly pure doping element layer is applied to the semiconductor layer after which the paste layer is screen printed to the doping element layer.

Inventors: Singh; Sukhvinder (Leuven, BE)

Assignee: IMEC

International Classification: H01L 21/24 (20060101)

Expiration Date: 2021-08-06 0:00:00