Patent Number: 8,502,345

Title: Reverse-conducting insulated gate bipolar transistor

Abstract: Reverse-conducting insulated gate bipolar transistor in which IGBT region and FWD region are integrated into a single body in a semiconductor substrate with a common active region is disclosed. MOS gate structure is on a first major surface side. Rear surface side structure is in a second major surface side of the semiconductor substrate and includes a plurality of recessed parts vertical to the second major surface, which are repeated periodically along the second major surface. A plurality of protruding parts are interposed between the recessed parts. Rear surface side structure includes p type collector region on a bottom surface of the recessed part, n type first field stop region at a position deeper than the collector region, n type cathode region on the top surface of the protruding part, and n type second field stop region in the protruding part at a position deeper than the cathode region.

Inventors: Nemoto; Michio (Matsumoto, JP), Yoshida; Souichi (Matsumoto, JP)

Assignee: Fuji Electric Co., Ltd.

International Classification: E21B 49/00 (20060101)

Expiration Date: 2021-08-06 0:00:00