Patent Number: 8,502,356

Title: Organic thin film transistors

Abstract: A method of forming an organic thin film transistor comprising source and drain electrodes with a channel region therebetween, a gate electrode, a dielectric layer disposed between the source and drain electrodes and the gate electrode, and an organic semiconductor disposed in at least the channel region between the source and drain electrodes, said method comprising: seeding a surface in the channel region with crystallization sites prior to deposition of the organic semiconductor; and depositing the organic semiconductor onto the seeded surface whereby the organic semiconductor crystallizes at the crystallization sites forming crystalline domains in the channel region.

Inventors: Halls; Jonathan J. (Cambridge, GB), Murphy; Craig Edward (Teddington, GB), Whiting; Gregory (Mountain View, CA), Hotta; Sadayoshi (Osaka, JP)

Assignee: Cambridge Display Technology Limited

International Classification: H01L 23/58 (20060101); H01L 29/08 (20060101); H01L 51/00 (20060101)

Expiration Date: 2021-08-06 0:00:00