Patent Number: 8,502,639

Title: Nanocomposite semiconducting material with reduced resistivity

Abstract: A resistor, fabricating method, and thermal sensor material for resistors that incorporate high Temperature Coefficient of Resistance (TCR) values and low resistivity for better sensitivity in infrared imaging applications are disclosed. Amorphous oxide thin films, preferably oxides of vanadium (VO.sub.x), were deposited on thermally grown silicon dioxide by direct current (DC) magnetron co-sputtering of noble metals (gold and platinum) in a controlled argon/oxygen atmosphere. The ideal conditions for preparing an amorphous vanadium oxide/noble metal thin film are identified. TCR and resistivity results showed that the additions of gold (Au) and platinum (Pt) into VO.sub.x reduced the resistivity. However, only gold (Au) was found to improve TCR value. Reducing the amount of oxygen in the thin film, further improved the ratio between TCR and resistivity. Infrared detection and imaging devices can be greatly improved with a "drop-in" amorphous vanadium oxide/noble metal thin film of the present invention.

Inventors: Coffey; Kevin R. (Oviedo, FL), Lam; Vu Huynh (Winter Springs, FL), Dein; Edward (Saint Cloud, FL), Warren; Andrew P. (Cocoa, FL), Boreman; Glenn (Geneva, FL), Zummo; Guy (Orlando, FL), Caba; Wilson (Orlando, FL)

Assignee: University of Central Florida Research Foundation, Inc.

International Classification: H01C 7/10 (20060101)

Expiration Date: 2021-08-06 0:00:00