Patent Number: 8,507,371

Title: Method of forming epitaxial semiconductor structure

Abstract: A method of growing an epitaxial semiconductor structure is disclosed. The growth and transfer are made using an epitaxy lateral overgrowth technique. The formed epitaxial film on an assembly substrate can be further processed to form devices such as solar cell, light emitting diode, and other devices and assembled into higher integration of desired applications.

Inventors: Pan; Eric Ting-Shan (Fremont, CA)

Assignee: Athenaeum LLC

International Classification: H01L 21/00 (20060101)

Expiration Date: 2021-08-13 0:00:00