Patent Number: 8,574,525

Title: Using boron-containing compounds, gasses and fluids during ammonothermal growth of group-III nitride crystals

Abstract: Boron-containing compounds, gasses and fluids are used during ammonothermal growth of group-Ill nitride crystals. Boron-containing compounds are used as impurity getters during the ammonothermal growth of group-Ill nitride crystals. In addition, a boron-containing gas and/or supercritical fluid is used for enhanced solubility of group-Ill nitride into said fluid.

Inventors: Pimputkar; Siddha (Goleta, CA), Kamber; Derrick S. (Goleta, CA), Speck; James S. (Goleta, CA), Nakamura; Shuji (Santa Barbara, CA)

Assignee: The Regents of the University of California

International Classification: C01B 21/06 (20060101); H01B 1/06 (20060101); C30B 21/02 (20060101); C30B 11/00 (20060101); C30B 7/00 (20060101); C01B 21/064 (20060101); C01B 21/072 (20060101); C09K 5/00 (20060101); B01D 9/00 (20060101); B01J 3/04 (20060101)

Expiration Date: 1/05/12017