Patent Number: 8,574,676

Title: Substrate processing method

Abstract: A substrate processing method includes steps of: arranging a substrate in a chamber; introducing H.sub.2 gas at a first flow rate and O.sub.2 gas at a second flow rate independently from the H.sub.2 gas into a catalyst reaction portion in which catalyst is accommodated, wherein H.sub.2O gas produced from the H.sub.2 gas and the O.sub.2 gas that contact the catalyst is ejected from the catalyst reaction portion toward the substrate; and reducing a flow rate of the O.sub.2 gas introduced to the catalyst reaction portion to a third flow rate that is lower than the second flow rate, wherein the steps of introducing the H.sub.2 gas and the O.sub.2 gas and reducing the flow rate of the O.sub.2 gas are repeated in this order at a predetermined repetition frequency, thereby processing the substrate.

Inventors: Yasui; Kanji (Niigata, JP), Nishiyama; Hiroshi (Niigata, JP), Inoue; Yasunobu (Niigata, JP), Ushijima; Mitsuru (Tokyo, JP), Iwabuchi; Katsuhiko (Kanagawa, JP)

Assignee: National University Corporation Nagaoka University of Technology

International Classification: C23C 16/40 (20060101)

Expiration Date: 1/05/12017