Patent Number: 8,574,820

Title: Method for fabricating semiconductor device

Abstract: A method for fabricating a semiconductor device includes: forming a first photoresist pattern with a first opening over an etch target layer; forming a second photoresist pattern with a plurality of second openings over the first photoresist pattern; and forming a plurality of patterns by etching the etch target layer by using the first photoresist pattern and the second photoresist pattern as an etch barrier.

Inventors: Lee; Chang-Goo (Gyeonggi-do, KR)

Assignee: Hynix Semiconductor Inc.

International Classification: G03F 7/26 (20060101)

Expiration Date: 1/05/12017