Patent Number: 8,574,955

Title: Method for producing light-emitting film and light-emitting device

Abstract: Provided is a light-emitting film having controllable resistivity, and a high-luminance light-emitting device, which can be driven at a low voltage, using such light-emitting film. The light-emitting film includes Cu as an addition element in a zinc sulfide compound which is a base material, wherein the zinc sulfide compound includes columnar ZnS crystals, and sites formed of copper sulfide on a grain boundary where the ZnS crystals are in contact with each other.

Inventors: Oike; Tomoyuki (Yokohama, JP), Iwasaki; Tatsuya (Machida, JP), Ohashi; Yoshihiro (Tokyo, JP)

Assignee: Canon Kabushiki Kaisha

International Classification: H01L 21/00 (20060101); H01L 29/24 (20060101)

Expiration Date: 1/05/12017