Patent Number: 8,574,994

Title: HBT with emitter electrode having planar side walls

Abstract: A heterojunction bipolar transistor is formed with an emitter electrode that comprises an emitter epitaxy underlying an emitter metal cap and that has horizontal dimensions that are substantially equal to the emitter metal cap.

Inventors: Fields; Charles H. (Calabasas, CA)

Assignee: HRL Laboratories, LLC

International Classification: H01L 21/331 (20060101)

Expiration Date: 1/05/12017