Patent Number: 8,575,016

Title: Method for etching gate stack

Abstract: A method for etching a metal gate stack is provided. The method includes forming a gate stack on a substrate, where the gate stack includes a metal gate. A wet etch process is performed on the gate stack. The wet etch process includes submersing the substrate with the gate stack in an aqueous solution composed of a wet etchant and an oxidizer, removing the substrate from the solution and rinsing the solution from the etched gate stack.

Inventors: Foster; John (Mountain View, CA), Van Berkel; Kim (Mountain View, CA)

Assignee: Intermolecular, Inc.

International Classification: H01L 21/3205 (20060101)

Expiration Date: 1/05/12017