Patent Number: 8,575,017

Title: Non-volatile semiconductor memory device and method of manufacturing the same

Abstract: A non-volatile semiconductor memory device comprises a plurality of memory cells, each including a semiconductor substrate, a first insulating film formed on the semiconductor substrate, a floating gate formed on the semiconductor substrate with the inclusion of the first insulating film, a second insulating film formed on the floating gate, and a control gate formed on the floating gate with the inclusion of the second insulating film; an element isolation insulating film formed in the semiconductor substrate and extending in a gate-length direction to isolate between memory cells adjoining in a gate-width direction; and an air gap formed on the element isolation insulating film and between floating gates adjoining in the gate-width direction.

Inventors: Kuniya; Takuji (Kawasaki, JP)

Assignee: Kabushiki Kaisha Toshiba

International Classification: H01L 21/3205 (20060101)

Expiration Date: 1/05/12017