Patent Number: 8,575,033

Title: Carbosilane precursors for low temperature film deposition

Abstract: Provided are processes for the low temperature deposition of silicon-containing films using carbosilane precursors containing a carbon atom bridging at least two silicon atoms. Certain methods comprise providing a substrate; in a PECVD process, exposing the substrate surface to a carbosilane precursor containing at least one carbon atom bridging at least two silicon atoms; exposing the carbosilane precursor to a low-powered energy sourcedirect plasma to provide a carbosilane at the substrate surface; and densifying the carbosilanestripping away at least some of the hydrogen atoms to provide a film comprising SiC. The SiC film may be exposed to the carbosilane surface to a nitrogen source to provide a film comprising SiCN.

Inventors: Weldman; Timothy W. (Sunnyvale, CA), Schroeder; Todd (Toledo, OH)

Assignee: Applied Materials, Inc.

International Classification: H01L 21/302 (20060101)

Expiration Date: 1/05/12017