Patent Number: 8,575,038

Title: Method for reducing thickness of interfacial layer, method for forming high dielectric constant gate insulating film, high dielectric constant gate insulating film, high dielectric constant gate oxide film, and transistor having high dielectric constant gate oxide film

Abstract: To provide a method for reducing a thickness of an interfacial layer, which contains: (a) forming a film of an oxide of a first metal on a semiconductor layer via an oxide film of a semiconducdor serving as an interfacial layer; and (b) forming a film of an oxide of a second metal on the film of the oxide of the first metal, where the second metal has higher valency than that of the first metal.

Inventors: Umezawa; Naoto (Ibaraki, JP), Chikyo; Toyohiro (Ibaraki, JP), Nabatame; Toshihide (Ibaraki, JP)

Assignee: National Institute for Materials Science

International Classification: H01L 21/316 (20060101)

Expiration Date: 1/05/12017