Patent Number: 8,575,472

Title: Photoelectric conversion device and method for producing same

Abstract: In order to increase photoelectric conversion efficiency in a photoelectric conversion device, there is disclosed a photoelectric converter containing a photoelectric conversion unit in which a p-type layer (40) containing a p-type dopant, an i-type layer (42) that is a microcrystalline silicon layer that is an electricity-generating layer, and an n-type layer (44) containing an n-type dopant are layered, wherein the p-type layer (40) is caused to have a layered structure comprising a first p-type layer (40a) that is a microcrystalline silicon layer, and a second p-type layer (40b) containing at least one of an amorphous silicon carbide p-type layer and an amorphous silicon p-type layer disclosed between the microcrystalline silicon p-type layer (40a) and the i-type layer (42). The second p-type layer (40b) is provided with an oxide layer on the side of the i-type layer (42).

Inventors: Murata; Kazuya (Izumisano, JP), Matsumoto; Mitsuhiro (Gifu, JP)

Assignee: Sanyo Electric Co., Ltd.

International Classification: H01L 31/00 (20060101)

Expiration Date: 1/05/12017