Patent Number: 8,575,659

Title: Carbon-beryllium combinationally doped semiconductor

Abstract: A combinationally doped semiconductor layer, a double heterojunction bipolar transistor (DHBT) including a combinationally doped semiconductor layer, and a method of making a combinationally doped semiconductor layer employ a combination of carbon and beryllium doping. The combinationally doped semiconductor layer includes a first sublayer of a semiconductor material doped substantially with beryllium and a second sublayer of the semiconductor material doped substantially with carbon. The DHBT includes a carbon-beryllium combinationally doped semiconductor layer as a base layer. The method of making a combinationally doped semiconductor layer includes growing a first sublayer of the semiconductor layer, the first sublayer being doped substantially with beryllium and growing a second sublayer of the semiconductor layer, the second sublayer being doped substantially with carbon.

Inventors: Bui; Steven S. (Simi Valley, CA), Hussain; Tahir (Malibu, CA), Li; James Chingwei (Simi Valley, CA)

Assignee: HRL Laboratories, LLC

International Classification: H01L 29/66 (20060101); H01L 21/8249 (20060101)

Expiration Date: 1/05/12017