Patent Number: 8,575,709

Title: High-k dielectric gate structures resistant to oxide growth at the dielectric/silicon substrate interface and methods of manufacture thereof

Abstract: Methods for fabricating gate electrode/high-k dielectric gate structures having an improved resistance to the growth of silicon dioxide (oxide) at the dielectric/silicon-based substrate interface. In an embodiment, a method of forming a transistor gate structure comprises: incorporating nitrogen into a silicon-based substrate proximate a surface of the substrate; depositing a high-k gate dielectric across the silicon-based substrate; and depositing a gate electrode across the high-k dielectric to form the gate structure. In one embodiment, the gate electrode comprises titanium nitride rich in titanium for inhibiting diffusion of oxygen.

Inventors: Bu; Huiming (Millwood, NY), Chudzik; Michael P. (Danbury, CT), He; Wei (Fishkill, NY), Henson; William K. (Beacon, NY), Krishnan; Siddarth A. (Hopewell Junction, NY), Kwon; Unoh (Fishkill, NY), Moumen; Naim (Walden, NY), Natzle; Wesley C. (New Paltz, NY)

Assignee: International Business Machines Corporation

International Classification: H01L 29/78 (20060101)

Expiration Date: 1/05/12017