Patent Number: 8,575,726

Title: Semiconductor device and method of manufacturing the same

Abstract: A semiconductor device includes: a semiconductor chip including: a first main face having an edge portion, a second main face locating the opposite side to the first main face, a crystalline defect region present within a region including at least the edge portion being adjacent to the first main face, the crystalline defect region being configured to have lower stress than the stress in the other semiconductor region for the same strain; and a metallic substrate to be bonded via a bonding member to the first main face of the semiconductor chip.

Inventors: Murakami; Yoshinori (Yokohama, JP)

Assignee: Nissan Motor Co., Ltd.

International Classification: H01L 23/58 (20060101)

Expiration Date: 1/05/12017