Patent Number: 8,575,749

Title: Semiconductor device and method for fabricating the same

Abstract: A semiconductor device includes a semiconductor chip, an electrode pad formed on the semiconductor chip, an underlying barrier metal formed on the electrode pad, a solder bump formed on the underlying barrier metal, and an underfill material surrounding the underlying barrier metal and the solder bump. A junction interface of the solder bump with the underlying barrier metal corresponds to an upper surface of the underlying barrier metal, and a portion of the underfill material bonded to a side surface of the solder bump and an end surface of the underlying barrier metal forms a right angle or an obtuse angle.

Inventors: Tsujimoto; Shinya (Kyoto, JP)

Assignee: Panasonic Corporation

International Classification: H01L 21/60 (20060101)

Expiration Date: 1/05/12017