Patent Number: 8,580,601

Title: Pixel sensor cell with a dual work function gate electrode

Abstract: Pixel sensor cells, methods of fabricating pixel sensor cells, and design structures for a pixel sensor cell. The pixel sensor cell has a gate structure that includes a gate dielectric and a gate electrode on the gate dielectric. The gate electrode includes a layer with first and second sections that have a juxtaposed relationship on the gate dielectric. The second section of the gate electrode is comprised of a conductor, such as doped polysilicon or a metal. The first section of the gate electrode is comprised of a metal having a higher work function than the conductor comprising the second section so that the gate structure has an asymmetric threshold voltage.

Inventors: Anderson; Brent A. (Jericho, VT), Bryant; Andres (Burlington, VT), Clark, Jr.; William F. (Essex Junction, VT), Ellis-Monaghan; John Joseph (Grand Isle, VT), Nowak; Edward J. (Essex Junction, VT)

Assignee: International Business Machines Corporation

International Classification: H01L 21/00 (20060101)

Expiration Date: 2022-11-12 0:00:00