Patent Number: 8,580,658

Title: Methods for fabricating graphene device topography and devices formed therefrom

Abstract: Methods for forming graphite-based structures, in which a substrate is patterned to form a plurality of elements on the substrate, are provided. A trench separates a first element from an adjacent element in the plurality. The surface of the first element and the surface of the trench (i) are respectively characterized by different first and second elevations and (ii) are separated by a side wall of the first element. Orthogonal projections of the surface of the first element and the surface of the trench onto a common plane are contiguous or overlapping. In the method, a first graphene layer on the entire first surface and a second graphene layer on the entire second surface are concurrently generated. The second graphene layer has a thickness that is less than a difference between the first and second elevations. Thus, a graphite-based structure having isolated first and second graphene layers is formed.

Inventors: Davis; Mark Alan (Springville, UT)

Assignee: Solan, LLC

International Classification: H01L 21/20 (20060101)

Expiration Date: 2022-11-12 0:00:00