Patent Number: 8,580,993

Title: Amino vinylsilane precursors for stressed SiN films

Abstract: The present invention is a method to increase the intrinsic compressive stress in plasma enhanced chemical vapor deposition (PECVD) silicon nitride (SiN) and silicon carbonitride (SiCN) thin films, comprising depositing the film from an amino vinylsilane-based precursor. More specifically the present invention uses the amino vinylsilane-based precursor selected from the formula: [RR.sup.1N].sub.xSiR.sup.3.sub.y(R.sup.2).sub.z, where x+y+z=4, x=1-3, y=0-2, and z=1-3; R, R.sup.1 and R.sup.3 can be hydrogen, C.sub.1 to C.sub.10 alkane, alkene, or C.sub.4 to C.sub.12 aromatic; each R.sup.2 is a vinyl, allyl or vinyl-containing functional group.

Inventors: Vorsa; Vasil (Coopersburg, PA), Johnson; Andrew David (Doylestown, PA), Xiao; Manchao (San Diego, CA)

Assignee: Air Products and Chemicals, Inc.

International Classification: C07F 7/10 (20060101)

Expiration Date: 2022-11-12 0:00:00