Patent Number: 8,585,821

Title: SiC epitaxial substrate and method for producing the same

Abstract: In one embodiment of the present invention, a monocrystal SiC epitaxial substrate is produced which includes a monocrystal SiC substrate; a buffer layer made of a first SiC epitaxial film formed on the monocrystal SiC substrate; and an active layer made of a second SiC epitaxial film formed on the buffer layer. The buffer layer is grown by heat-treating a set of the monocrystal SiC substrate, a carbon source plate, and a metal Si melt layer having a predetermined thickness and interposed between the monocrystal SiC substrate and the metal Si melt layer, so as to epitaxially grow monocrystal SiC on the monocrystal SiC substrate. The active layer is grown by epitaxially growing monocrystal SiC on the buffer layer by vapor phase growth method. This allows for production of a monocrystal SiC epitaxial substrate including a high-quality monocrystal SiC active layer being low in defects.

Inventors: Nakamura; Nobuhiko (Kyoto, JP), Matsunami; Toru (Kyoto, JP), Nishikawa; Kimito (Kyoto, JP)

Assignee: Ecotron Co., Ltd.

International Classification: C30B 25/02 (20060101)

Expiration Date: 1/19/12018