Patent Number: 8,586,127

Title: Crystallisation method with control of the orientation of the crystal grains

Abstract: A crystallization method, including: depositing a thin film of a crystalline material on a substrate; heating the substrate and the crystalline material deposited on the substrate to a first temperature for a time enabling internal strains present in the crystalline material to be relaxed; after the heating, subjecting the substrate and the crystalline material to a second temperature and to a uniform bending by placing the substrate on a bending bench, a quantity of bending and a difference between the first and the second temperature having values determined from elastic bending constants, thermal deformations and thermal expansion coefficients to favor a particular crystallographic orientation of the crystalline material along an azimuth direction in relation to a direction normal to the substrate.

Inventors: Sicardy; Olivier (Saint Egreve, FR)

Assignee: Commissariat a l'Energie Atomique

International Classification: B05D 5/12 (20060101)

Expiration Date: 1/19/12018