Patent Number: 8,715,413

Title: Method for manufacturing a group III nitride semiconductor crystal and method for manufacturing a group III nitride semiconductor substrate

Abstract: The invention provides a method for manufacturing a Group III nitride semiconductor crystal. The method includes the steps of preparing a seed crystal and performing a convex surface-growing step to grow the group III nitride semiconductor crystal. The growth surface of the group III nitride semiconductor crystal is constituted only by a plurality of surfaces not vertical to a growth direction and the group III nitride semiconductor crystal grows while forming a convex shape as a whole by the growth surface constituted of the plurality of surfaces. The invention also provides a method for manufacturing a group III nitride semiconductor substrate.

Inventors: Oshima; Yuichi (Tsuchiura, JP)

Assignee: Hitachi Cable, Ltd.

International Classification: C30B 21/02 (20060101)

Expiration Date: 5/06/12018