Patent Number: 8,715,775

Title: Precursors and uses for CIS and CIGS photovoltaics

Abstract: Processes for making a photovoltaic layer on a substrate by depositing a first layer of an ink onto the substrate, wherein the ink contains one or more compounds having the formula M.sup.B(ER).sub.3, wherein M.sup.B is In, Ga, or Al, E is S or Se, and depositing a second layer of one or more copper chalcogenides or a CIGS material.

Inventors: Fujdala; Kyle L. (San Jose, CA), Zhu; Zhongliang (San Jose, CA), Chomitz; Wayne A. (Santa Monica, CA), Kuchta; Matthew C. (San Francisco, CA)

Assignee: Precursor Energetics, Inc.

International Classification: H01B 1/10 (20060101); H01B 1/12 (20060101); B05D 5/12 (20060101); H01B 1/06 (20060101)

Expiration Date: 5/06/12018