Patent Number: 8,716,034

Title: Method of manufacturing magnetic memory

Abstract: According to one embodiment, a method of manufacturing a magnetic memory, the method includes forming a first magnetic layer having a variable magnetization, forming a tunnel barrier layer on the first magnetic layer, forming a second magnetic layer on the tunnel barrier layer, the second magnetic layer having an invariable magnetization, forming a hard mask layer as a mask on the second magnetic layer, patterning the second magnetic layer by using the mask of the hard mask layer, and executing a GCIB-irradiation by using the mask of the hard mask layer, after the patterning.

Inventors: Ohsawa; Yuichi (Yokohama, JP), Takahashi; Shigeki (Yokohama, JP), Ito; Junichi (Yokohama, JP), Saida; Daisuke (Fuchu, JP), Suguro; Kyoichi (Yokohama, JP), Yoda; Hiroaki (Sagamihara, JP)

Assignee: Kabushiki Kaisha Toshiba

International Classification: H01L 21/00 (20060101)

Expiration Date: 5/06/12018