Patent Number: 8,716,037

Title: Measurement of CMOS device channel strain by X-ray diffraction

Abstract: A direct measurement of lattice spacing by X-ray diffraction is performed on a periodic array of unit structures provided on a substrate including semiconductor devices. Each unit structure includes a single crystalline strained material region and at least one stress-generating material region. For example, the single crystalline strained material region may be a structure simulating a channel of a field effect transistor, and the at least one stress-generating material region may be a single crystalline semiconductor region in epitaxial alignment with the single crystalline strained material region. The direct measurement can be performed in-situ at various processing states to provide in-line monitoring of the strain in field effect transistors in actual semiconductor devices.

Inventors: Adam; Thomas N. (Slingerlands, NY), Bedell; Stephen W. (Wappingers Falls, NY), Harley; Eric C. (LaGrangeville, NY), Holt; Judson R. (Wappingers Falls, NY), Madan; Anita (Danbury, CT), Murray; Conal E. (Yorktown Heights, NY), Pinto; Teresa L. (Walkill, NY)

Assignee: International Business Machines Corporation

International Classification: G01R 31/26 (20060101); H01L 21/66 (20060101)

Expiration Date: 5/06/12018