Patent Number: 8,716,096

Title: Self-aligned emitter-base in advanced BiCMOS technology

Abstract: A self-aligned bipolar transistor and method of fabricating the same are disclosed. In an embodiment, a substrate and an intrinsic base are provided, followed by a first oxide layer, and an extrinsic base over the first oxide layer. A first opening is formed, exposing a portion of a surface of the extrinsic base. Sidewall spacers are formed in the first opening, and a self-aligned oxide mask is selectively formed on the exposed surface of the extrinsic base. The spacers are removed, and using the self-aligned oxide mask, the exposed extrinsic base and the first oxide layer are etched to expose the intrinsic base layer, forming a first and a second slot. A silicon layer stripe is selectively grown on the exposed intrinsic and/or extrinsic base layers in each of the first and second slots, substantially filling the respective slot.

Inventors: Chan; Kevin K. (Staten Island, NY), Harame; David L. (Essex Junction, VT), Herrin; Russell T. (Essex Junction, VT), Liu; Qizhi (Lexington, MA)

Assignee: International Business Machines Corporation

International Classification: H01L 21/331 (20060101); H01L 21/8222 (20060101)

Expiration Date: 5/06/12018