Patent Number: 8,716,101

Title: Structure and method of reducing electromigration cracking and extrusion effects in semiconductor devices

Abstract: A structure for reducing electromigration cracking and extrusion effects in semiconductor devices includes a first metal line formed in a first dielectric layer; a cap layer formed over the first metal line and first dielectric layer; a second dielectric layer formed over the cap layer; and a void formed in the second dielectric layer, stopping on the cap layer, wherein the void is located in a manner so as to isolate structural damage due to electromigration effects of the first metal line, the effects including one or more of extrusions of metal material from the first metal line and cracks from delamination of the cap layer with respect to the first dielectric layer.

Inventors: Chandra; Kaushik (Fishkill, NY), Filippi; Ronald G. (Wappingers Falls, NY), Li; Wai-Kin (Beacon, NY), Wang; Ping-Chuan (Hopewell Junction, NY), Yang; Chih-Chao (Poughkeepsie, NY)

Assignee: International Business Machines Corporation

International Classification: H01L 21/76 (20060101)

Expiration Date: 5/06/12018