Patent Number: 8,716,118

Title: Replacement gate structure for transistor with a high-K gate stack

Abstract: A transistor includes a semiconductor layer and a gate structure located on the semiconductor layer. The gate structure includes a first dielectric layer. The first dielectric layer includes a doped region and an undoped region below the doped region. A second dielectric layer is located on the first dielectric layer, and a first metal nitride layer is located on the second dielectric layer. The doped region of the first dielectric layer comprises dopants from the second dielectric layer. Source and drain regions in the semiconductor layer are located on opposite sides of the gate structure.

Inventors: Ando; Takashi (Tuckahoe, NY), Cartier; Eduard A. (New York, NY), Kwon; Unoh (Fishkil, NY), Narayanan; Vijay (New York, NY)

Assignee: International Business Machines Corporation

International Classification: H01L 21/3205 (20060101)

Expiration Date: 5/06/12018